TiS2 二硫化鈦晶體（Titanium Disulfide）

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更新時(shí)間：2024-02-10 16:56:07瀏覽次數(shù)：60次

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  二維材料

二維材料粉末

二維材料溶液

碲化物晶體

硒化物晶體

硫化物晶體

絕緣體

鈣鈦礦

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MOFS材料

二維材料薄膜

黑磷

六方氮化硼

其他二維材料

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上海巨納科技有限公司

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產(chǎn)品簡(jiǎn)介

簡(jiǎn)要描述：Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.

詳細(xì)介紹

Our TiS2 crystals are stabilized in 1T ohase (semimetallic phase). They are grown using two different techniques through chemical vapor transport (CVT) or flux zone growth (see description of these two methods below). These crystals are treated as gold standards in 2D materials field owing to perfected electronic behavior with guaranteed phase transition and semimetallic responses. Our TiS2 crystals are notoriously known low impurity resistance (zero temperature resistance), high carrier mobility, extremely clean and sharp XRD peaks, and negligible amount of defects (see published results as well as CVT vs. Flux based methods below ). Our TiS2 crystals are large in size and ready for exfoliation without any preparation.

Properties of vdW TiS2 crystals

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.