當(dāng)前位置：上海巨納科技有限公司>>二維材料>>硒化物晶體>>n-type MoSe2 crystals N型二硒化鉬晶體

n-type MoSe2 crystals N型二硒化鉬晶體

返回列表頁

參考價(jià)

面議

具體成交價(jià)以合同協(xié)議為準(zhǔn)

產(chǎn)品型號(hào)

品牌

廠商性質(zhì)其他

所在地上海

在線詢價(jià) 收藏產(chǎn)品查看聯(lián)系電話

聯(lián)系方式：袁文軍查看聯(lián)系方式

更新時(shí)間：2024-02-12 14:52:42瀏覽次數(shù)：87次

聯(lián)系我時(shí)，請(qǐng)告知來自環(huán)保在線

產(chǎn)品分類 品牌分類

  二維材料

二維材料粉末

二維材料溶液

碲化物晶體

硒化物晶體

硫化物晶體

絕緣體

鈣鈦礦

異質(zhì)結(jié)

MOFS材料

二維材料薄膜

黑磷

六方氮化硼

其他二維材料

全部產(chǎn)品列表

暫無信息

上海巨納科技有限公司

經(jīng)營模式：其他

商鋪產(chǎn)品：574條

所在地區(qū)：

聯(lián)系人：袁文軍

詢價(jià) 給他留言

產(chǎn)品簡(jiǎn)介

簡(jiǎn)要描述：Years of growth optimization lead to our flawless n-type MoSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

詳細(xì)介紹

Years of growth optimization lead to our flawless n-type MoSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field. Our n-type MoSe2 crystals are doped with Re or Au atoms at ~1E17-1E18 cm-3 range. However, if your research requires other types or concentration of dopants please contact us. Intentionally doped MoSe2 crystals from 2Dsemiconductors are known for its superior valleytronic performance, perfect crystallization, defect free structure, extremely narrow PL bandwidths, clean PL spectra (free of bound exciton shoulders), and high carrier mobility. Thousands of scientific articles have cited us and used these crystals for scientific accuracy and clean signals. Please also see our n- and p-type MoSe2 crystals doped with Au, Re, Nb, or other transition metal atoms. Please note that doping into TMDCs greatly reduce the crystallization time (growth speeds), thus electronically doped TMDCs measure smaller than undoped (intrinsic) TMDCs.

Single crystal n-type MoSe2 characteristics

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.

/Meeting/MAR18/Session/K36.3

/Meeting/MAR17/Session/V1.14

Summary of available doped layered materials

MoS2; n-type and p-type available (via Nb, Co, Ni, Au, or Re dopants)

WS2; n-type and p-type available (via Au or Nb doping;

WSe2; n-type and p-type available (via Re or Nb doping)

MoSe2 ; n-type and p-type available (via Re or Nb doping)

Black phosphorus; n-type or p-type doping available (via Br or As doping)

ReX2 (X=S, Se); n-type or p-type doping available (via Mo or Nb doping)

Bi2X3 (X=S,Se, and Te); n-type or p-type doping available (via Ca doping)