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CdI2 碘化鎘晶體

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簡(jiǎn)要描述：CdI? is a layered semiconductor with indirect gap at 3.0 eV for bulk and its properties in the monolayer form is currently unknown.

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CdI? is a layered semiconductor with indirect gap at 3.0 eV for bulk and its properties in the monolayer form is currently unknown. It crystallizes in generally known as CdI2 crystal structure as shown in the product images. The repeating I-Cd-I trilayer stack couples to each other via weak Van der Waals forces.

CdI? crystal is around 6-7mm in size and can easily be exfoliated down to monolayer using conventional exfoliation techniques.

Material has been developed last 3 years to achieve impressive purity (99.9995%). Stoichiometry (perfect 1:2 ratio), defect density (less than one point defect for every 75,000 atoms), and single domain size (~90 microns) allowing to exfoliate large monolayers.

Auger electron, X-ray photoelectron, Secondary ion mass spectroscopy techniques have been employed to determine the elemental composition. XRD, Raman, and PL as well as electronic transport measurements were performed to confirm electrical, optical, and chemical quality of synthesized monolayers.