污水處理設(shè)備 污泥處理設(shè)備 水處理過(guò)濾器 軟化水設(shè)備/除鹽設(shè)備 純凈水設(shè)備 消毒設(shè)備|加藥設(shè)備 供水/儲(chǔ)水/集水/排水/輔助 水處理膜 過(guò)濾器濾芯 水處理濾料 水處理劑 水處理填料 其它水處理設(shè)備
上海巨納科技有限公司
會(huì)員1.png)
上海巨納科技有限公司
| 參 考 價(jià) | 面議 |
產(chǎn)品型號(hào)
品 牌
廠商性質(zhì)其他
所 在 地上海
聯(lián)系方式：袁文軍查看聯(lián)系方式
更新時(shí)間：2024-02-15 14:42:33瀏覽次數(shù)：58次
聯(lián)系我時(shí)，請(qǐng)告知來(lái)自 環(huán)保在線暫無(wú)信息 |
簡(jiǎn)要描述：Isolated monolayer thickness MoS2 are grown onto c-cut （0001） sapphire substrates.
Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates. This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach continuity with coalesced MoS2 triangles, this sample contains well-separated triangles for advanced spectroscopy, microscopy, and electronic measurements. Synthesized monolayer MoS2 triangles are highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.
Sample Properties.
Sample size | 1cm x 1cm square shaped |
Substrate type | (0001) c-cut sapphire |
Coverage | Isolated and Partially Merged Monolayer Triangles |
Electrical properties | 1.85 eV Direct Bandgap Semiconductor |
Crystal structure | Hexagonal Phase |
Unit cell parameters | a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120° |
Production method | Atmospheric Pressure Chemical Vapor Deposition (APCVD) |
Characterization methods | Raman, photoluminescence, TEM, EDS |
Specifications
1) Well-separated MoS2 domains across c-cut sapphire
2) One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
3) Atomically smooth surface with roughness < 0.15 nm.
4) Highly uniform surface morphology. MoS2 triangles are scattered across sample
5) 99.9995% purity as determined by nano-SIMS measurements
6) Repeatable Raman and photoluminescence response
7) High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
8) c-cut Sapphire but our research and development team can transfer MoS2 triangles onto variety of substrates including PET, quartz, and SiO2/Si without significant compromising of material quality.
9) Defect profile. MoS2 monolayer triangles do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.
Supporting datasets [for Monolayer MoS2 Triangles on c-cut Sapphire]
Transmission electron images (TEM) acquired from CVD grown MoS2 isolated triangles on c-cut sapphire confirming highly crystalline nature of monolayers
Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown MoS2 isolated triangles on c-cut sapphire confirming Mo:S 1:2 ratios
Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown MoS2 isolated triangles on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.
您感興趣的產(chǎn)品PRODUCTS YOU ARE INTERESTED IN
環(huán)保在線 設(shè)計(jì)制作，未經(jīng)允許翻錄必究 .? ? ?
請(qǐng)輸入賬號(hào)
請(qǐng)輸入密碼
請(qǐng)輸驗(yàn)證碼
